EQUATE-funded paper makes cover of Advanced Physics Research

Energy-efficient, fast, and non-volatile memory is the apogee of antiferromagnetic spintronics. The cover page shows a device that utilizes an antiferromagnetic, B-doped thin film of magnetoelectric Cr₂O₃. Voltage applied across the film controls its Néel vector and state variable. To facilitate high-temperature operation, the Néel temperature, T_N, of B:Cr₂O₃ is tuned. In the article by Ather Mahmood, Christian Binek, and colleagues, cold neutron and x-ray photoemission (XPS) data show that annealing leads to interfacial B-accumulation and T_N increase. Neutron and XPS depth profiling map the depth-dependent B-concentration. (From Advanced Physics Research)